?2012 fairchild semiconductor corporation 1 www.fairchildsemi.com FGH40T65UPD rev. c0 FGH40T65UPD 650 v 40 a field stop trench igbt april 2013 absolute maximum ratings notes: 1: repetitive rating: pulse width limited by max. junction temperature 2: ic = 120a, vce = 400v, rg = 15 thermal characteristics symbol description ratings unit v ces collector to emitter voltage 650 v v ges gate to emitter voltage 20 v i c collector current @ t c = 25 o c80 a collector current @ t c = 100 o c40 a i cm (1) pulsed collector current 120 a i lm (2) clamped inductive load current @ t c = 25 o c120 a i f diode forward current @ t c = 25 o c40 a diode forward current @ t c = 100 o c20 a i fm(1) pulsed diode maximum forward current 120 a p d maximum power dissipation @ t c = 25 o c268 w maximum power dissipation @ t c = 100 o c134 w scwt short circuit withstand time @ t c = 25 o c5 us t j operating junction temperature -55 to +175 o c t stg storage temperature range -55 to +175 o c t l maximum lead temp. for soldering purposes, 1/8? from case for 5 seconds 300 o c symbol parameter typ. max. unit r jc (igbt) thermal resistance, junction to case - 0.56 o c / w r jc (diode) thermal resistance, junction to case - 1.71 o c / w r ja thermal resistance, junction to ambient - 40 o c / w g e c collector (flange) e c g FGH40T65UPD 650 v, 40 a field stop trench igbt features ? maximum junction temperature : t j = 175 o c ? positive temperaure co-efficient for easy parallel operating ? high current capability ? low saturation voltage: v ce(sat) = 1.65 v(typ.) @ i c = 40 a ? 100% of parts tested i lm(2) ? high input impedance ? tightened parameter distribution ? rohs compliant ? short-circuit ruggedness > 5us @25 o c general description using innovative field stop trenc h igbt technology, fairchild ? ?s new series of field stop trench igbts offer optimum perfor- mance for solar inverter, ups, welder, and digital power genera- tor where low conduction and swit ching losses are essential. applications ? solar inverter, ups, welder, digital power generator ? telecom, ess
FGH40T65UPD 650 v 40 a field stop trench igbt ?2012 fairchild semiconductor corporation 2 www.fairchildsemi.com FGH40T65UPD rev. c0 package marking and ordering information for fairchild?s definition of ?green? eco status, please visit: http://www.fairchildsemi.com/company/green/rohs_green.html . electrical characteristi cs of the igbt t c = 25c unless otherwise noted device marking device package eco status packing type qty per tube FGH40T65UPD FGH40T65UPD to-247 - - 30ea symbol parameter test conditions min. typ. max. unit off characteristics bv ces collector to emitter breakdown voltage v ge = 0v, i c = 1ma 650 - - v bv ces t j temperature coefficient of breakdown voltage v ge = 0v, i c = 250ua -0.6-v/ o c i ces collector cut-off current v ce = v ces , v ge = 0v - - 250 a i ges g-e leakage current v ge = v ges , v ce = 0v - - 400 na on characteristics v ge(th) g-e threshold voltage i c = 40ma, v ce = v ge 4.0 6.0 7.5 v v ce(sat) collector to emitter saturation voltage i c = 40a , v ge = 15v -1.652.3 v i c = 40a , v ge = 15v, t c = 175 o c -2.1- v dynamic characteristics c ies input capacitance v ce = 30v , v ge = 0v, f = 1mhz - 2730 3630 pf c oes output capacitance - 82 110 pf c res reverse transfer capacitance - 48 72 pf switching characteristics t d(on) turn-on delay time v cc = 400v, i c = 40a, r g = 7 , v ge = 15v, inductive load, t c = 25 o c -2026ns t r rise time - 26 34 ns t d(off) turn-off delay time - 144 187 ns t f fall time - 17 22 ns e on turn-on switching loss - 1.59 2.1 mj e off turn-off switching loss - 0.58 0.76 mj e ts total switching loss - 2.17 2.86 mj t d(on) turn-on delay time v cc = 400v, i c = 40a, r g = 7 , v ge = 15v, inductive load, t c = 175 o c -19- ns t r rise time - 38 - ns t d(off) turn-off delay time - 153 - ns t f fall time - 60 - ns e on turn-on switching loss - 1.84 - mj e off turn-off switching loss - 0.98 - mj e ts total switching loss - 2.82 - mj t sc short circuit withstand time v ge = 15v, v cc =400v, r g = 10 5--us
FGH40T65UPD 650 v 40 a field stop trench igbt ?2012 fairchild semiconductor corporation 3 www.fairchildsemi.com FGH40T65UPD rev. c0 electrical characteristi cs of the igbt (continued) electrical characteristi cs of the diode t c = 25c unless otherwise noted symbol parameter test conditions min. typ. max unit q g total gate charge v ce = 400v, i c = 40a, v ge = 15v - 177 265 nc q ge gate to emitter charge - 23 35 nc q gc gate to collector charge - 100 150 nc symbol parameter test conditions min. typ. max unit v fm diode forward voltage i f = 20a t c = 25 o c- 2.1 2.7 v t c = 175 o c- 1.9 - e rec reverse recovery energy i f = 20a, di f /dt = 200a/ s t c = 175 o c- 96 - uj t rr diode reverse recovery time t c = 25 o c - 33 43 ns t c = 175 o c - 128 - q rr diode reverse recovery charge t c = 25 o c - 53 74 nc t c = 175 o c - 341 -
FGH40T65UPD 650 v 40 a field stop trench igbt ?2012 fairchild semiconductor corporation 4 www.fairchildsemi.com FGH40T65UPD rev. c0 typical performance characteristics figure 1. typical output characteristics figure 2. typical output char acteristics figure 3. typical saturation voltage figure 4. transfer characteristics characteristics figure 5. saturation voltage vs. case figure 6. saturation voltage vs. v ge temp erature at variant current level 0246810 0 20 40 60 80 100 120 v ge = 8v 20v t c = 25 o c 15v 12v 10v collector current, i c [a] collector-emitter voltage, v ce [v] 0246810 0 20 40 60 80 100 120 v ge = 8v 20v t c = 175 o c 15v 12v 10v collector current, i c [a] collector-emitter voltage, v ce [v] 0246 0 20 40 60 80 100 120 common emitter v ge = 15v t c = 25 o c t c = 175 o c collector current, i c [a] collector-emitter voltage, v ce [v] 3691215 0 20 40 60 80 100 120 common emitter v ce = 20v t c = 25 o c t c = 175 o c collector current, i c [a] gate-emitter voltage,v ge [v] 4 8 12 16 20 0 4 8 12 16 20 i c = 20a 40a 80a common emitter t c = -40 o c collector-emitter voltage , v ce [v] gate-emitter voltage, v ge [v] 25 50 75 100 125 150 175 1.0 1.5 2.0 2.5 3.0 3.5 4.0 80a 40a i c = 20a common emitter v ge = 15v collector-emitter voltage, v ce [v] collector-emittercase temperature, t c [ o c]
FGH40T65UPD 650 v 40 a field stop trench igbt ?2012 fairchild semiconductor corporation 5 www.fairchildsemi.com FGH40T65UPD rev. c0 typical performance characteristics figure 7. saturation voltage vs. v ge figure 8. saturation voltage vs. v ge figure 9. capacitance characteristics figure 10. gate charge characteristics figure 11. soa characteristics figure 12. turn-on characteristics vs. gate resi stance 4 8 12 16 20 0 4 8 12 16 20 i c = 20a 40a 80a common emitter t c = 25 o c collector-emitter voltage , v ce [v] gate-emitter voltage, v ge [v] 4 8 12 16 20 0 4 8 12 16 20 80a i c = 20a 40a common emitter t c = 175 o c collector-emitter voltage, v ce [v] gate-emitter voltage, v ge [v] 110 30 100 1000 10000 common emitter v ge = 0v, f = 1mhz t c = 25 o c c res c oes c ies capacitance [pf] collector-emitter voltage, v ce [v] 30 0 30 60 90 120 150 180 0 3 6 9 12 15 300v common emitter t c = 25 o c 200v v cc = 400v gate-emitter voltage, v ge [v] gate charge, q g [nc] 0.1 1 10 100 1000 0.01 0.1 1 10 100 1000 1ms 10 ms dc *notes: 1. t c = 25 o c 2. t j = 175 o c 3. single pulse 10 s 100 s collector current, i c [a] collector-emitter voltage, v ce [v] 0 1020304050 5 10 100 switching time [ns] common emitter v cc = 400v, v ge = 15v i c = 40a t c = 25 o c t c = 175 o c t d(on) t r gate resistance, r g [ ]
FGH40T65UPD 650 v 40 a field stop trench igbt ?2012 fairchild semiconductor corporation 6 www.fairchildsemi.com FGH40T65UPD rev. c0 typical performance characteristics figure 13. turn-off characteristics vs. figure 14. turn-on characteristics vs. gate resistance collector current figure 15. turn-off characteristics vs. figure 16. switching loss vs. collector current gate resistance figure 17. switching loss vs. figure 18. turn off switching collector current soa characteristics 0 1020304050 1 10 100 1000 common emitter v cc = 400v, v ge = 15v i c = 40a t c = 25 o c t c = 175 o c t d(off) t f switching time [ns] gate resistance, r g [ ] 20 30 40 50 60 70 80 1 10 100 1000 common emitter r g = 7 , v ge = 15v , v cc = 400v t c = 25 o c t c = 175 o c t r t d(on) switching time [ns] collector current, i c [a] 20 30 40 50 60 70 80 1 10 100 1000 common emitter v ge = 15v, r g = 7 v cc = 400v t c = 25 o c t c = 175 o c t d(off) t f switching time [ns] collector current, i c [a] 0 1020304050 100 1000 10000 common emitter v cc = 400v, v ge = 15v i c = 40a t c = 25 o c t c = 175 o c e on e off switching loss [uj] gate resistance, r g [ ] 1 10 100 1000 1 10 100 200 safe operating area v ge = 15v, t c = 175 o c collector current, i c [a] collector-emitter voltage, v ce [v] 20 30 40 50 60 70 80 100 1000 10000 common emitter v ge = 15v, r g = 7 t c = 25 o c t c = 175 o c e on e off switching loss [uj] collector current, i c [a]
FGH40T65UPD 650 v 40 a field stop trench igbt ?2012 fairchild semiconductor corporation 7 www.fairchildsemi.com FGH40T65UPD rev. c0 typical performance characteristics figure 19. current derating figure 20. load current vs. frequence figure 21. forward characteristics figure 22. reverse recovery current figure 23. stored charge figure 24. reverse recovery time 0 25 50 75 100 125 150 175 200 0 30 60 90 collector current, ic[a] case temperature, t c [ o c] 1k 10k 100k 1m 0 40 80 120 160 duty cycle : 50% t c = 100 o c powe dissipation = 134 w v cc = 400v load current : peak of square wave t c = 100 o c collector current, i c [a] switching frequency, f [hz] 012345 1 10 100 200 t c = 75 o c t c = 25 o c t c = 175 o c forward voltage, v f [v] forward current, i f [a] t c = 25 o c t c = 75 o c t c = 175 o c 0 9 18 27 36 45 0 2 4 6 200a/ s di f /dt = 100a/ s t c = 25 o c t c = 175 o c reverse recovery currnet, i rr [a] i c [a] di f /dt = 100a/ s 200a/ s 5 10152025303540 0 100 200 300 400 200a/ s di f /dt = 100a/ s t c = 25 o c t c = 175 o c 200a/ s di f /dt = 100a/ s stored recovery charge, q rr [nc] forwad current, i f [a] 5 10152025303540 0 50 100 150 di f /dt = 100a/ s 200a/ s t c = 25 o c t c = 175 o c di f /dt = 100a/ s 200a/ s reverse recovery time, t rr [ns] forward current, i f [a]
FGH40T65UPD 650 v 40 a field stop trench igbt ?2012 fairchild semiconductor corporation 8 www.fairchildsemi.com FGH40T65UPD rev. c0 typical performance characteristics figure 25. transient thermal impedance of igbt figure 26.transient thermal impedance of diod e 1e-5 1e-4 1e-3 0.01 0.1 1e-3 0.01 0.1 1 0.01 0.02 0.1 0.05 0.2 single pulse thermal response [zthjc] rectangular pulse duration [sec] duty factor, d = t1/t2 peak t j = pdm x zthjc + t c 0.5 t 1 p dm t 2 1e-5 1e-4 1e-3 0.01 0.1 1 0.01 0.1 1 3 0.01 0.02 0.1 0.05 0.2 single pulse thermal response [zthjc] rectangular pulse duration [sec] duty factor, d = t1/t2 peak t j = pdm x zthjc + t c 0.5 t 1 p dm t 2
FGH40T65UPD 650 v 40 a field stop trench igbt ?2012 fairchild semiconductor corporation 9 www.fairchildsemi.com FGH40T65UPD rev. c0 mechanical dimensions to - 247a03
FGH40T65UPD 650 v 40 a field stop trench igbt ?2012 fairchild semiconductor corporation 10 www.fairchildsemi.com FGH40T65UPD rev. c0 trademarks the following includes registered and unregistered trademarks and se rvice marks, owned by fairchild semiconductor and/or its gl obal subsidiaries, and is not intended to be an exhaustive list of all such trademarks. *trademarks of system general corporation, used under license by fairchild semiconductor. disclaimer fairchild semiconductor reserves the right to make changes with out further notice to any products herein to improve reliability, function, or design. fairchild does not assume an y liability arising out of the application or use of any product or circuit described herein; neither does it convey an y license under its patent rights, nor the rights of others. these specifications do not expand the terms of fairchild?s wo rldwide terms and conditions, specifically the warranty therein, which covers these products. life support policy fairchild?s products are not authorized for use as critical co mponents in life support devices or systems without the express written approval of fa irchild semiconductor corporation. as used here in: 1. life support devices or systems ar e devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a signi ficant injury of the user. 2. a critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. product status definitions definition of terms 2cool? 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